Invention Grant
- Patent Title: Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
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Application No.: US16138031Application Date: 2018-09-21
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Publication No.: US10921392B2Publication Date: 2021-02-16
- Inventor: Kazuumi Inubushi , Katsuyuki Nakada
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2017-184943 20170926
- Main IPC: G01R33/09
- IPC: G01R33/09 ; G11B5/39 ; H01F10/32 ; G11C11/16 ; G01R33/12 ; H01F10/193 ; H01F10/30 ; B82Y10/00 ; B82Y25/00
Abstract:
A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Niγ1Alγ2Xγ3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0
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