Invention Grant
- Patent Title: Array substrate and method for forming the same
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Application No.: US16341671Application Date: 2018-08-15
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Publication No.: US10921663B2Publication Date: 2021-02-16
- Inventor: Huailiang He
- Applicant: HKC Corporation Limited , Chongqing HKC Optoelectronics Technology Co., ltd.
- Applicant Address: CN Shenzhen; CN Chongqing
- Assignee: HKC Corporation Limited,Chongqing HKC Optoelectronics Technology Co., ltd.
- Current Assignee: HKC Corporation Limited,Chongqing HKC Optoelectronics Technology Co., ltd.
- Current Assignee Address: CN Shenzhen; CN Chongqing
- Agency: WPAT, PC
- Priority: CN201710741413.9 20170825
- International Application: PCT/CN2018/100592 WO 20180815
- International Announcement: WO2019/037631 WO 20190228
- Main IPC: G02F1/1362
- IPC: G02F1/1362 ; H01L27/12 ; H01L27/146

Abstract:
An array substrate is provided. The array substrate includes a substrate, a light-shielding layer formed on the substrate, a buffer layer formed on the light-shielding layer, a semiconductor layer formed on the buffer layer, a protection layer formed on the semiconductor layer, an insulating layer formed on the protection layer, and an interlayer dielectric layer formed on the protection layer. The substrate includes a source layer, a drain layer and a gate layer disposed thereon. The source layer and the drain layer are formed on the interlayer dielectric layer. The source layer and the drain layer are separately connected to conductor portions on two ends of the semiconductor layer. The insulating layer is disposed between the gate layer and the semiconductor layer. The interlayer dielectric layer is disposed to cover the gate layer and the protection layer. The insulating layer is disposed to cover the semiconductor layer.
Public/Granted literature
- US20190384129A1 ARRAY SUBSTRATE AND METHOD FOR FORMING THE SAME Public/Granted day:2019-12-19
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