Invention Grant
- Patent Title: Backside illuminated image sensor and method of manufacturing the same
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Application No.: US16565937Application Date: 2019-09-10
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Publication No.: US10923522B2Publication Date: 2021-02-16
- Inventor: Chang Hun Han
- Applicant: DB HITEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: DB HITEK CO., LTD.
- Current Assignee: DB HITEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Patterson Thuente Pedersen, P.A.
- Priority: KR10-2018-0109621 20180913
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A backside illuminated image sensor includes pixel regions disposed in a substrate, an insulating layer disposed on a frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, and an anti-reflective layer disposed on a backside surface of the substrate. The substrate has a first opening for partially exposing a backside surface of the insulating layer, and the insulating layer has a third opening for partially exposing a backside surface of the bonding pad. The anti-reflective layer comprises a first portion disposed on an inner side surface of the first opening and a second portion disposed on a portion of the backside surface of the insulating layer exposed by the first opening and having a second opening connecting the first opening with the third opening, and a first spacer is disposed on inner side surfaces of the second opening and the third opening.
Public/Granted literature
- US20200091209A1 BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-03-19
Information query
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