Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height, including a plurality of epitaxial layers such as a first n-layer, a first p-layer, and a first active layer. A second flat region at a second height and parallel to the first flat region includes at least a second n-layer. Sloped sidewalls connect the first flat region and the second flat region and include at least a third n-layer. The p-layer of the first flat region is thicker that at least a portion of the third region. A p-contact is formed on the first p-layer and an n-contact is formed on the second n-layer.