Invention Grant
- Patent Title: Nanofilm, thin film transistor, and manufacture methods thereof
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Application No.: US16167204Application Date: 2018-10-22
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Publication No.: US10923671B2Publication Date: 2021-02-16
- Inventor: Hu Meng
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: McDermott Will & Emery LLP
- Priority: CN201810188979.8 20180307
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L29/06 ; H01L51/00 ; B82Y10/00 ; H01L29/16 ; B82Y30/00 ; B82Y40/00 ; H01L29/786 ; H01L29/66
Abstract:
Disclosed is a nanofilm, a thin film transistor and manufacture methods thereof. The nanofilm of the present disclosure comprises a plurality of regions distributed in a film plane dimension, wherein each of the regions is composed of one kind of nanomaterial, and nanomaterials of adjacent regions are different from each other and contact with each other to form a heterojunction or a Schottky junction.
Public/Granted literature
- US20190280228A1 NANOFILM, THIN FILM TRANSISTOR, AND MANUFACTURE METHODS THEREOF Public/Granted day:2019-09-12
Information query
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