Invention Grant
- Patent Title: Power amplifying apparatus having bias boosting structure with improved linearity
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Application No.: US16168950Application Date: 2018-10-24
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Publication No.: US10924062B2Publication Date: 2021-02-16
- Inventor: Kyu Jin Choi , Jae Hyouck Choi , Je Hee Cho
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2017-0181052 20171227
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/02 ; H03F3/189 ; H03F3/21 ; H03F3/24 ; H03F1/32 ; H03F3/191

Abstract:
A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.
Public/Granted literature
- US20190199291A1 POWER AMPLIFYING APPARATUS HAVING BIAS BOOSTING STRUCTURE WITH IMPROVED LINEARITY Public/Granted day:2019-06-27
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