- Patent Title: Pattern structure and method of manufacturing the pattern structure
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Application No.: US16858129Application Date: 2020-04-24
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Publication No.: US10928573B2Publication Date: 2021-02-23
- Inventor: Sunghoon Lee , Joonyong Park , Dongouk Kim , Jihyun Bae , Bongsu Shin , Dongsik Shim , Jaeseung Chung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2016-0138637 20161024
- Main IPC: G02B5/30
- IPC: G02B5/30 ; G03F7/00 ; B28D5/02 ; G02F1/1335
Abstract:
A method for manufacturing a pattern structure includes preparing a wafer that has a plurality of fine patterns, generating a first trench by processing the wafer from a first surface to a first depth, and generating a second trench connected to the first trench by processing the wafer from a second surface which is opposite to the first surface to a second depth, thereby cutting the wafer.
Public/Granted literature
- US20200249384A1 PATTERN STRUCTURE AND METHOD OF MANUFACTURING THE PATTERN STRUCTURE Public/Granted day:2020-08-06
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