Invention Grant
- Patent Title: Resistance switching memory-based accelerator
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Application No.: US16032675Application Date: 2018-07-11
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Publication No.: US10929059B2Publication Date: 2021-02-23
- Inventor: Myoungsoo Jung , Gyuyoung Park , Jie Zhang
- Applicant: MemRay Corporation , YONSEI UNIVERSITY, UNIVERSITY—INDUSTRY FOUNDATION (UIF)
- Applicant Address: KR Seoul; KR Seoul
- Assignee: MemRay Corporation,YONSEI UNIVERSITY, UNIVERSITY—INDUSTRY FOUNDATION (UIF)
- Current Assignee: MemRay Corporation,YONSEI UNIVERSITY, UNIVERSITY—INDUSTRY FOUNDATION (UIF)
- Current Assignee Address: KR Seoul; KR Seoul
- Agency: Dinsmore & Shohl LLP
- Priority: KR10-2016-0119517 20160919,KR10-2017-0112840 20170904,KR10-2018-0046378 20180420
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F9/30 ; G06F13/16

Abstract:
A resistance switching memory-based accelerator configured to be connected to a host including a CPU and a system memory is provided. A resistance switching memory module includes a memory cell array including a plurality of resistance switching memory cells, and stores a kernel offloaded from the host. An accelerator core includes a plurality of processing elements, and the kernel is executed by a target processing element among the plurality of processing elements. An MCU manages a memory request generated in accordance with execution of the kernel by the target processing element. A memory controller is connected to the resistance switching memory module, and allows data according to the memory request to move between the resistance switching memory module and the target processing element, in accordance with the memory request transferred from the MCU. A network integrates the accelerator core, the plurality of processing elements, and the memory controller.
Public/Granted literature
- US20180321880A1 RESISTANCE SWITCHING MEMORY-BASED ACCELERATOR Public/Granted day:2018-11-08
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