Invention Grant
- Patent Title: Proactive corrective actions in memory based on a probabilistic data structure
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Application No.: US16356759Application Date: 2019-03-18
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Publication No.: US10929474B2Publication Date: 2021-02-23
- Inventor: Saeed Sharifi Tehrani , Sivagnanam Parthasarathy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F16/903 ; G06F11/07

Abstract:
The present disclosure includes apparatuses and methods for proactive corrective actions in memory based on a probabilistic data structure. A number of embodiments include a memory, and circuitry configured to input information associated with a subset of data stored in the memory into a probabilistic data structure and proactively determine, at least partially using the probabilistic data structure, whether to take a corrective action on the subset of data stored in the memory.
Public/Granted literature
- US20190213218A1 PROACTIVE CORRECTIVE ACTIONS IN MEMORY BASED ON A PROBABILISTIC DATA STRUCTURE Public/Granted day:2019-07-11
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