Invention Grant
- Patent Title: Chip design method of optimizing circuit performance according to change in PVT operation conditions
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Application No.: US17028172Application Date: 2020-09-22
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Publication No.: US10929587B2Publication Date: 2021-02-23
- Inventor: Ji-youn Kim , Eun-ju Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0013436 20180202,KR10-2018-0091443 20180806
- Main IPC: G06F30/30
- IPC: G06F30/30 ; G06F30/39 ; G06F30/3312 ; G06F119/12

Abstract:
A method of designing a chip having an integrated circuit is provided. The method includes obtaining delta cell delays and delta net delays according to a process, voltage, and temperature (PVT) corner change with respect to a plurality of cells and a plurality of nets forming the integrated circuit; analyzing sensitivity with respect to a delay according to the PVT corner change of a plurality of paths in the integrated circuit, by using the delta cell delays and the delta net delays; determining N-number of sensitivity-critical paths among the plurality of paths based on a result of the analysis, wherein N is an integer greater than or equal to 0; and performing an engineering change order (ECO) based on a result of the determination.
Public/Granted literature
- US20210004514A1 CHIP DESIGN METHOD OF OPTIMIZING CIRCUIT PERFORMANCE ACCORDING TO CHANGE IN PVT OPERATION CONDITIONS Public/Granted day:2021-01-07
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