Invention Grant
- Patent Title: Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
-
Application No.: US16732970Application Date: 2020-01-02
-
Publication No.: US10930566B2Publication Date: 2021-02-23
- Inventor: Lisa F. Edge , Hemanth Jagannathan , Paul C. Jamison , Vamsi K. Paruchuri
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Daniel Morris
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L27/12 ; H01L29/51 ; H01L29/78 ; H01L21/84 ; H01L29/49 ; H01L29/66 ; H01L29/786
Abstract:
An electrical device that includes a p-type semiconductor device having a p-type work function gate structure including a first high-k gate dielectric, a first metal containing buffer layer, a first titanium nitride layer having a first thickness present on the metal containing buffer layer, and a first gate conductor contact. A mid gap semiconductor device having a mid gap gate structure including a second high-k gate dielectric, a second metal containing buffer layer, a second titanium nitride layer having a second thickness that is less than the first thickness present, and a second gate conductor contact. An n-type semiconductor device having an n-type work function gate structure including a third high-k gate dielectric present on a channel region of the n-type semiconductor device, a third metal containing buffer layer on the third high-k gate dielectric and a third gate conductor fill present atop the third metal containing buffer layer.
Information query
IPC分类:
