Invention Grant
- Patent Title: Gallium-nitride based devices implementing an engineered substrate structure
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Application No.: US16914026Application Date: 2020-06-26
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Publication No.: US10930576B2Publication Date: 2021-02-23
- Inventor: Vladimir Odnoblyudov , Cem Basceri , Shari Farrens , Ozgur Aktas
- Applicant: QROMIS, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: QROMIS, Inc.
- Current Assignee: QROMIS, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L21/02 ; H01L23/66 ; H01L29/20 ; H01L29/78 ; H01L25/16 ; H01L33/32 ; H01L33/64 ; H01P1/30 ; H01P3/00 ; H03H9/02 ; B81B3/00 ; H03H9/17

Abstract:
A micro-electromechanical system (MEMS) device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The support structure defines a cavity. The MEMS device also includes a III-V membrane coupled to a portion of the support structure. A portion of the III-V membrane is suspended over the cavity defined by the support structure and defines a MEMS structure.
Public/Granted literature
- US20200335418A1 GALLIUM-NITRIDE BASED DEVICES IMPLEMENTING AN ENGINEERED SUBSTRATE STRUCTURE Public/Granted day:2020-10-22
Information query
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