Invention Grant
- Patent Title: Semiconductor device including trenches formed in transistor or diode portions
-
Application No.: US15900810Application Date: 2018-02-21
-
Publication No.: US10930647B2Publication Date: 2021-02-23
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JPJP2016-047188 20160310,JPJP2016-201972 20161013,JPJP2017-024925 20170214
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/739 ; H01L29/08 ; H01L29/36 ; H01L29/40 ; H01L29/423 ; H01L27/06 ; H01L27/07 ; H01L21/76 ; H01L29/861 ; H01L21/765 ; H01L29/06 ; H01L29/10 ; H01L29/32
Abstract:
A semiconductor device that allows easy hole extraction is provided. The semiconductor device includes: a semiconductor substrate having drift and base regions; a transistor portion formed in the semiconductor substrate; and a diode portion formed adjacent to the transistor portion and in the semiconductor substrate. In the transistor portion and the diode portion: a plurality of trench portions each arrayed along a predetermined array direction; and a plurality of mesa portions formed between respective trench portions are formed, among the plurality of mesa portions, at least one boundary mesa portion at a boundary between the transistor portion and the diode portion includes a contact region at an upper surface of the semiconductor substrate and having a concentration higher than that of the base region, and an area of the contact region at the boundary mesa portion is greater than an area of the contact region at another mesa portion.
Public/Granted literature
- US20180182754A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-06-28
Information query
IPC分类:
