Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US15922707Application Date: 2018-03-15
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Publication No.: US10930667B2Publication Date: 2021-02-23
- Inventor: Jung Ryul Ahn
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2015-0073035 20150526,KR10-2015-0124390 20150902
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11573 ; H01L27/1157

Abstract:
A semiconductor device includes a substrate including a cell region and a peripheral region, a cell stacked structure stacked on the substrate in the cell region, a channel layer in one structure penetrating the cell stacked structure, a driving transistor formed in the peripheral region, and a plug structure coupled to the driving transistor and including a stacking structure of at least two contact plugs shorter than the channel layer, wherein each of the contact plugs is arranged at a same height as a part of the cell stacked structure.
Public/Granted literature
- US20180204850A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2018-07-19
Information query
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