Invention Grant
- Patent Title: Semiconductor storage device and method for manufacturing semiconductor storage device
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Application No.: US16561823Application Date: 2019-09-05
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Publication No.: US10930673B2Publication Date: 2021-02-23
- Inventor: Kyosuke Nanami , Kenichi Fujii
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-038626 20190304
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11524 ; H01L27/11556 ; H01L21/768 ; H01L23/528 ; H01L23/522 ; H01L27/1157
Abstract:
According to one embodiment, a semiconductor storage device includes: a first stair portion which descends in a second direction that is a direction away from a pillar, and has a plurality of steps; and a third stair portion which is provided to face the first stair portion, and ascends in the second direction, and has a plurality of steps. A distance from an upper end of an uppermost step surface of the first stair portion to an upper end of a lowermost step surface of the first stair portion at a position identical to the upper end in the third direction is longer than a distance from an upper end of an uppermost step surface of the third stair portion to an upper end of a lowermost step surface of the third stair portion at a position identical to the upper end in the third direction.
Public/Granted literature
- US20200286912A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2020-09-10
Information query
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