Systems and methods for reducing RRAM relaxation in crossbar array circuits for low current applications are provided. In some implementations, an apparatus comprises: a first row wire; a first column wire; an RRAM device; an access control device, wherein the RRAM device and the access control device serially connected and connecting between the first row wire and the first column wire, and wherein the RRAM device comprises: a first electrode; a first switching layer formed on the first electrode; and a second electrode formed on the first switching layer, wherein the first switching layer is doped with a first oxide material comprising SiO2, or Al2O3. The first electrode and the second electrode are, in some implementations, made of one of the following materials: Pt, Pd, Ta, Ti, Hf, W, TiN, and TaN.