Display device and manufacturing method thereof
Abstract:
One embodiment of the invention is characterized as follows. A display device comprising: a display area including a plurality of pixels, each of the pixels has a first TFT and a second TFT, the first TFT and the second TFT comprise an oxide semiconductor, the first TFT and the second TFT are covered by an interlayer insulating film, a first through hole is formed in the in the interlayer insulating film to connect a drain of the first TFT, wherein a distance d1 between a center of the first through hole and an edge of a channel of the first TFT is shorter than a distance d2 between a center of the first through hole and an edge of a channel of the second TFT, a channel length of the first TFT is shorter than a channel length of the second TFT.
Public/Granted literature
Information query
Patent Agency Ranking
0/0