Invention Grant
- Patent Title: Semiconductor device including a silicon carbide layer
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Application No.: US16861317Application Date: 2020-04-29
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Publication No.: US10930732B2Publication Date: 2021-02-23
- Inventor: Johji Nishio , Mitsuhiro Kushibe , Tatsuo Shimizu
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2017-123874 20170626
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/868 ; H01L29/16 ; H01L29/66 ; H01L29/739 ; H01L29/32 ; H01L29/861 ; H01L21/265 ; H01L21/04 ; H01L29/04
Abstract:
A semiconductor device of the embodiment includes: a first region provided in a silicon carbide layer; and a second region provided around the first region in the silicon carbide layer, the second region having a higher concentration of at least one kind of a lifetime killer impurity selected from the group consisting of B (boron), Ti (titanium), V (vanadium), He (helium) and H+ (proton) than a concentration of a lifetime killer impurity in the first region.
Public/Granted literature
- US20200258978A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-08-13
Information query
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