Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US16135014Application Date: 2018-09-19
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Publication No.: US10930736B2Publication Date: 2021-02-23
- Inventor: Koichi Masuda
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-027780 20180220
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/739 ; H01L23/34 ; G01K7/16 ; H01L23/64 ; H01L23/04 ; H01L23/373

Abstract:
A semiconductor apparatus includes: an insulating substrate including an insulating layer having first and second main surfaces, a metal plate on the first main surface, and first to fourth conductors on the second main surface; a semiconductor device including a rear electrode electrically connected to the first conductor and a front electrode electrically connected to the second conductor; a temperature detection device including a first electrode electrically connected to the third conductor and a second electrode electrically connected to the fourth conductor; a first terminal electrically connected to the third conductor; a second terminal positioned so as to be wire-connectable to the fourth conductor; and a third terminal electrically connected to the second conductor, wherein the fourth conductor is positioned so as to be wire-connectable to the second conductor.
Public/Granted literature
- US20190259837A1 SEMICONDUCTOR APPARATUS Public/Granted day:2019-08-22
Information query
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