A p-type base region is configured by a p−-type channel region and a p-type high-impurity-concentration region adjacent to the channel region in a horizontal direction. A point having a highest impurity concentration in the high-concentration region is located at a position separated from a lower surface of an n++-type source region. The impurity concentration in the high-impurity-concentration region decreases toward the front surface of the semiconductor substrate and the rear surface of the semiconductor substrate in the depth direction. The impurity concentration in the high-impurity-concentration region decreases toward the low-impurity-concentration region in a direction parallel to the front surface of the semiconductor substrate.