A Si substrate is etched through a first mask material layer formed on the Si substrate and serving as a mask, to form a Si pillar on a Si substrate. Subsequently, a second mask material layer formed so as to surround the side surface of the Si pillar is used as a mask to form a Si-pillar base part surrounding the Si pillar. Subsequently, the first and second mask material layers are used as masks to form a SiO2 layer so as to occupy the whole section of the Si-pillar base part and connect to the Si substrate positioned in a region around the Si-pillar base part. Recessed portions are formed in the upper and lower regions of the SiO2 layer. Subsequently, on the SiO2 layer, an SGT is formed so as to include a gate insulating HfO2 layer surrounding the Si pillar, a gate conductor TiN layer, N+ layers serving as the source or drain within the Si pillar, and a Si pillar serving as the channel between the N+ layers.