Invention Grant
- Patent Title: Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in termination
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Application No.: US16512538Application Date: 2019-07-16
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Publication No.: US10930774B2Publication Date: 2021-02-23
- Inventor: Fu-Yuan Hsieh
- Applicant: Nami MOS CO., LTD.
- Applicant Address: TW New Taipei
- Assignee: Nami MOS CO., LTD.
- Current Assignee: Nami MOS CO., LTD.
- Current Assignee Address: TW New Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/40 ; H01L23/544 ; H01L29/10
Abstract:
A trench MOSFET is disclosed having shielded trenched gates in active area, multiple floating trenched gates and at least one channel stop trenched gate in termination area. A semiconductor power device layout is disclosed consisting of at least two said trench MOSFETs connected together with multiple sawing trenched gates across a space between the two trench MOSFETs having a width same as scribe line, making the invented trench MOSFET be feasibly achieved without degraded performance.
Public/Granted literature
- US20210020776A1 Shielded Gate Trench MOSFETs with Floating Trenched gates and Channel Stop Trenched Gates in Termination Public/Granted day:2021-01-21
Information query
IPC分类:
