A silicon carbide semiconductor device has a rectangle-shaped active region in which a main current flows, and a termination region surrounding the active region in a plan view. The device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type on the front surface of the substrate, a second semiconductor layer of a second conductivity type, at a surface at the first semiconductor layer, a first semiconductor region of the first conductivity type, selectively provided in the second semiconductor layer, the second semiconductor region disposed from a periphery of the active region to reach the termination region, and extending along each of directions of four sides of the active region. At the four sides of the active region, a cross-sectional structure of each layer and each region of the device is identical to one another.