Invention Grant
- Patent Title: High voltage LDMOS transistor and methods for manufacturing the same
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Application No.: US15929547Application Date: 2020-05-08
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Publication No.: US10930776B2Publication Date: 2021-02-23
- Inventor: Ker-Hsiao Huo , Kong-Beng Thei , Chien-Chih Chou , Yi-Min Chen , Chen-Liang Chu
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/08 ; H01L29/10
Abstract:
A semiconductor device is provided. The semiconductor device comprises a substrate, a gate, a first doped region and a second doped region. The gate is over the substrate. The first doped region and the second doped region are in the substrate. The first doped region and the second doped region are of a same conductivity type and separated by the gate. The length of the first doped region is greater than a length of the second doped region in a direction substantially perpendicular to a channel length defined between the first doped region and the second doped region.
Public/Granted literature
- US20200266295A1 HIGH VOLTAGE LDMOS TRANSISTOR AND METHODS FOR MANUFACTURING THE SAME Public/Granted day:2020-08-20
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