Invention Grant
- Patent Title: Bottom channel isolation in nanosheet transistors
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Application No.: US15493730Application Date: 2017-04-21
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Publication No.: US10930793B2Publication Date: 2021-02-23
- Inventor: Robin H. Chao , Choonghyun Lee , Chun W. Yeung , Jingyun Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Robert Sullivan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L21/225 ; H01L21/02 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; B82Y10/00 ; H01L29/10 ; H01L29/775
Abstract:
Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.
Public/Granted literature
- US20180308986A1 BOTTOM CHANNEL ISOLATION IN NANOSHEET TRANSISTORS Public/Granted day:2018-10-25
Information query
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