Invention Grant
- Patent Title: Photovoltaic devices with increased efficiency and methods for making the same
-
Application No.: US15173626Application Date: 2016-06-04
-
Publication No.: US10930809B2Publication Date: 2021-02-23
- Inventor: Priscilla D. Antunez , Yun Seog Lee , Ravin Mankad , Teodor K. Todorov
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Jeffrey S. LaBaw
- Main IPC: H01L31/0749
- IPC: H01L31/0749 ; H01L31/0224
Abstract:
A photovoltaic device with increased efficiency and a method for making the same. The present invention provides a photovoltaic device including: a transparent substrate; a transparent conductive electrode layer disposed on the transparent substrate; an n-type layer disposed on the transparent conductive electrode layer; a chalcogen absorber layer disposed on the n-type layer; a p-type molybdenum trioxide (MoO3) interlayer disposed on the chalcogen absorber layer; and a conductive layer disposed on the interlayer. A photovoltaic device having a superstrate configuration with the order of the layers reversed is also provided. The present invention further provides methods for making the photovoltaic devices according to the present invention.
Public/Granted literature
- US20170352770A1 Photovoltaic Devices with Increased Efficiency and Methods for Making the Same Public/Granted day:2017-12-07
Information query
IPC分类:
