A method of fabricating a magnetic storage device includes depositing a first conductive material. The method further includes electrically isolating distinct instances of the first conductive material to form a first wire extending along a first direction. The method further includes depositing, on the distinct instances of the first conductive material, a set of device layers. The method further includes electrically isolating distinct instances of the device layers to form spin orbit torque magnetic random access memory (SOT-MRAM) devices positioned on distinct instances of the first conductive material. The method further includes depositing, on the distinct instances of the device layers, a layer of a second conductive material and electrically isolating a plurality of distinct instances of the layer of the second conductive material to form a plurality of second wires extending along a second direction. The second direction is different from the first direction.