Invention Grant
- Patent Title: Radiation detector and method for manufacturing the same
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Application No.: US16292380Application Date: 2019-03-05
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Publication No.: US10930861B2Publication Date: 2021-02-23
- Inventor: Isao Takasu , Hyangmi Jung , Kohei Nakayama , Yuko Nomura , Rei Hasegawa
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-173747 20180918
- Main IPC: H01L51/00
- IPC: H01L51/00 ; G01T1/24 ; H01L51/44 ; H01L51/42 ; H01L27/30

Abstract:
According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 μm or more.
Public/Granted literature
- US20200091440A1 RADIATION DETECTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-03-19
Information query
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