Invention Grant
- Patent Title: Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device
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Application No.: US16285961Application Date: 2019-02-26
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Publication No.: US10934484B2Publication Date: 2021-03-02
- Inventor: Wen Dar Liu , Yi-Chia Lee
- Applicant: Versum Materials US, LLC
- Applicant Address: US AZ Tempe
- Assignee: Versum Materials US, LLC
- Current Assignee: Versum Materials US, LLC
- Current Assignee Address: US AZ Tempe
- Main IPC: C09K13/00
- IPC: C09K13/00 ; H01L21/02 ; H01L21/306 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; C09G1/00
Abstract:
Described herein is an etching solution comprising water; an oxidizer; a water-miscible organic solvent; a fluoride ion source; a corrosion inhibitor and optionally, a surfactant, optionally a buffer, optionally a chelating agent. Such compositions are useful for the selective removal of silicon-germanium over germanium from a microelectronic device having such material(s) thereon during its manufacture.
Public/Granted literature
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