Invention Grant
- Patent Title: Memory storage device and system employing nonvolatile read/write buffers
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Application No.: US16126582Application Date: 2018-09-10
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Publication No.: US10936203B2Publication Date: 2021-03-02
- Inventor: Tetsuya Sunata , Daisuke Iwai , Kenichiro Yoshii
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-069140 20180330
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/56 ; G06F12/02

Abstract:
A memory device can be connected to a host through an interface. The memory device includes a nonvolatile memory which includes a plurality of blocks, and a controller which is electrically connected to the nonvolatile memory. In a case where a read command is received from the host, the controller reads first data designated by the read command from a first block of the nonvolatile memory, to transmit the first data to the host, and to write the first data to a second block of the nonvolatile memory instead of the first block.
Public/Granted literature
- US20190303019A1 MEMORY DEVICE AND COMPUTER SYSTEM FOR IMPROVING READ PERFORMANCE AND RELIABILITY Public/Granted day:2019-10-03
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