A processing device in a memory system receives a memory command indicating a read window size and a first read voltage and identifies a read window for a first data block of the memory component having the read window size and centered at the first read voltage. The processing device determines whether a number of bit flips for the first data block within the read window exceeds an error threshold and, in response to the number of bit flips exceeding the error threshold, refreshes data stored on the first data block of the memory component.