Invention Grant
- Patent Title: Method and layout of an integrated circuit
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Application No.: US16556831Application Date: 2019-08-30
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Publication No.: US10936780B2Publication Date: 2021-03-02
- Inventor: Mahantesh Hanchinal , Chi Wei Hu , Min-Yuan Tsai , Shu-Yi Ying
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/027 ; G06F30/392 ; G06F30/398 ; G03F1/36 ; H01L21/768 ; G06F119/18 ; G06F30/3953 ; G06F30/3947

Abstract:
A method of manufacturing an integrated circuit includes identifying a first cell of a layout, placing a first pair of conductive patterns on a first set of routing tracks, placing a second pair of conductive patterns on a second set of routing tracks, and forming, by a first mask, a first set of conductive structures based on the first pair or second pair of conductive patterns. The first cell abuts a second cell. The first cell has a first set of routing tracks. The second cell has a second set of routing tracks. The first and second cell have a same cell height that is a non-integer multiple of a minimum pitch. A top and bottom boundary of the first cell overlaps a pair of the first set of routing tracks. A top and bottom boundary of the second cell overlaps a pair of the second set of routing tracks.
Public/Granted literature
- US20190392108A1 METHOD AND LAYOUT OF AN INTEGRATED CIRCUIT Public/Granted day:2019-12-26
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