- Patent Title: Non-volatile memory device and storage device including the same
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Application No.: US16933768Application Date: 2020-07-20
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Publication No.: US10937471B2Publication Date: 2021-03-02
- Inventor: Dong-Su Jang , Man-Jae Yang , Jeong-Don Ihm , Go-Eun Jung , Byung-Hoon Jeong , Young-Don Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0126354 20170928
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C11/4096 ; G11C7/22 ; G11C11/4076 ; G11C5/06 ; G11C16/26

Abstract:
A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.
Public/Granted literature
- US20200349986A1 NON-VOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING THE SAME Public/Granted day:2020-11-05
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