Invention Grant
- Patent Title: Systems and methods utilizing serial and parallel configurations of magnetic memory devices
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Application No.: US16506878Application Date: 2019-07-09
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Publication No.: US10937478B2Publication Date: 2021-03-02
- Inventor: Kadriye Deniz Bozdag , Marcin Gajek , Mourad El Baraji , Eric Michael Ryan
- Applicant: SPIN MEMORY, INC.
- Applicant Address: US CA Fremont
- Assignee: SPIN MEMORY, INC.
- Current Assignee: SPIN MEMORY, INC.
- Current Assignee Address: US CA Fremont
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L43/02 ; H01L43/08 ; G11C11/16 ; G11C11/00 ; H01L27/22 ; H01L43/10
Abstract:
An apparatus includes two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a second MTJ having a second magnetic characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The first magnetic characteristic is based on a first magnetic anisotropy and a first offset field on a first storage layer of the first MTJ. The second magnetic characteristic is based on a second magnetic anisotropy and a second offset field on a second storage layer of the second MTJ, The apparatus further includes a metallic separator coupling the first MTJ with the second MTJ, wherein the first MTJ and the second MTJ are arranged in series.
Public/Granted literature
- US20200043535A1 Systems and Methods Utilizing Parallel Configurations of Magnetic Memory Devices Public/Granted day:2020-02-06
Information query
