Invention Grant
- Patent Title: Laser annealing method
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Application No.: US16503330Application Date: 2019-07-03
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Publication No.: US10937651B2Publication Date: 2021-03-02
- Inventor: Masakazu Tanaka , Shinji Koiwa , Kouichi Karatani , Akihiro Shinozuka , Nobutake Nodera , Takao Matsumoto
- Applicant: SAKAI DISPLAY PRODUCTS CORPORATION
- Applicant Address: JP Sakai
- Assignee: SAKAI DISPLAY PRODUCTS CORPORATION
- Current Assignee: SAKAI DISPLAY PRODUCTS CORPORATION
- Current Assignee Address: JP Sakai
- Agency: ScienBiziP, P.C.
- Priority: JPJP2018-143166 20180731
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B23K26/354 ; H01L21/67 ; H01L27/12
Abstract:
A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the portion, two molten regions that have elongate shapes congruent to each other and are arranged in line symmetry with each other.
Public/Granted literature
- US20200043731A1 LASER ANNEALING METHOD Public/Granted day:2020-02-06
Information query
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