Invention Grant
- Patent Title: Method for removing silicon oxide and integrated circuit manufacturing process
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Application No.: US16372849Application Date: 2019-04-02
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Publication No.: US10937661B2Publication Date: 2021-03-02
- Inventor: Zhenguo Ma
- Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201610879096.2 20161008
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/67 ; H01L21/033
Abstract:
A method for removing silicon oxide from a wafer and an integrated circuit manufacturing process are provided. The method includes: introducing a dehydrated hydrogen fluoride gas and a dehydrated alcohol gas into a process chamber; mixing the dehydrated hydrogen fluoride gas with the dehydrated alcohol gas to generate gaseous etchants; allowing reactions between the etchants and the wafer in the process chamber under a high pressure maintained in the process chamber to improve an etching selectivity; and pumping out reaction products from the process chamber.
Public/Granted literature
- US20190244828A1 METHOD FOR REMOVING SILICON OXIDE AND INTEGRATED CIRCUIT MANUFACTURING PROCESS Public/Granted day:2019-08-08
Information query
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