Invention Grant
- Patent Title: Capacitor and method for producing the same
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Application No.: US14951337Application Date: 2015-11-24
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Publication No.: US10937696B2Publication Date: 2021-03-02
- Inventor: Florian Krach , Tobias Erlbacher
- Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Applicant Address: DE Munich
- Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee Address: DE Munich
- Agency: Perkins Coie LLP
- Agent Michael A. Glenn
- Priority: DE102014223904 20141124
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/78 ; H01L29/66 ; H01L29/94 ; H01L27/06

Abstract:
In a method for producing a capacitor, a dielectric structure is generated in a trench of a semiconductor substrate. The dielectric structure includes a plurality of adjacent dielectric layers having opposing material tensions.
Public/Granted literature
- US20160190230A1 Unknown Public/Granted day:2016-06-30
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