Invention Grant
- Patent Title: Method of examining defects in a semiconductor specimen and system thereof
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Application No.: US16676216Application Date: 2019-11-06
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Publication No.: US10937706B2Publication Date: 2021-03-02
- Inventor: Yotam Sofer , Ariel Hirszhorn
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; H01L21/66 ; G01N15/14 ; G05B19/418

Abstract:
A first defect map representing defects in a first semiconductor specimen in an attribute hyperspace may be received. Scores may be assigned to classified defects in the first defect map where an assigned score of a given defect of the classified defects in the first defect map is indicative of a number of defects within a threshold distance in the attribute hyperspace to the given defect in the first defect map that are classified to a same defect class as the given defect. A second defect map representing defects in a second semiconductor specimen in the attribute hyperspace may be received. Defects in the second defect map may be selected for review based on the scores assigned to the classified defects in the first defect map. The selected defects in the second defect map may be selected for classification.
Public/Granted literature
- US20200075434A1 METHOD OF EXAMINING DEFECTS IN A SEMICONDUCTOR SPECIMEN AND SYSTEM THEREOF Public/Granted day:2020-03-05
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