Invention Grant
- Patent Title: Semiconductor module and method for manufacturing semiconductor module
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Application No.: US16318194Application Date: 2017-03-17
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Publication No.: US10937731B2Publication Date: 2021-03-02
- Inventor: Tomohisa Suzuki , Takeshi Terasaki
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JPJP2016-147038 20160727
- International Application: PCT/JP2017/010990 WO 20170317
- International Announcement: WO2018/020729 WO 20180201
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/00 ; H01L25/07 ; H01L25/00 ; H01L29/16 ; H01L23/48 ; H01L25/18

Abstract:
Provided is a semiconductor module enabling to effectively reduce, with a relatively simple structure, a thermal strain occurring in a bonding section between a semiconductor chip and other conductor members. The semiconductor module is characterized by being provided with: a first wiring layer; a semiconductor element bonded on the first wiring layer via a first bonding layer; a first electrode bonded on the semiconductor element via a second bonding layer; a second electrode connected on the first electrode; and a second wiring layer connected on the second electrode. The semiconductor module is also characterized in that: the width of the second electrode, said width being in the short-side direction, is more than the thickness of the first electrode; and the second electrode is disposed at a position off the center position of the semiconductor element.
Public/Granted literature
- US20190287896A1 SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE Public/Granted day:2019-09-19
Information query
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