Invention Grant
- Patent Title: Fan-out transition structure for transmission of mm-Wave signals from IC to PCB via chip-scale packaging
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Application No.: US16568715Application Date: 2019-09-12
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Publication No.: US10937748B1Publication Date: 2021-03-02
- Inventor: Houssam Kanj , Wenyao Zhai , Hari Krishna Pothula , Morris Repeta
- Applicant: HUAWEI TECHNOLOGIES CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Guangdong
- Agency: BCF LLP
- Main IPC: H03H7/38
- IPC: H03H7/38 ; H01L23/66 ; H05K1/02 ; H01P5/22 ; H01P3/20 ; H01P3/08 ; H01L23/00

Abstract:
The disclosed systems, structures, and methods are directed to a mm-Wave communication structure employing a first transmission structure employing a first ring transition structure followed by a first ground structure and a second ground structure configured to carry a ground signal, a second transmission structure employing a second ring transition structure followed by a third ground structure and a fourth ground structure configured to carry the ground signal, a third transmission structure configured to carry a mm-Wave signal, wherein the third transmission structure begins at the center of the first ring transition structure and the second ring transition structure and the third transmission structure is coplanar with the second transmission structure, and a fourth transmission structure configured to operatively couple an IC and the first transmission layer, the second transmission layer, and the third transmission structure.
Public/Granted literature
- US20210082840A1 FAN-OUT TRANSITION STRUCTURE FOR TRANSMISSION OF mm-WAVE SIGNALS FROM IC TO PCB VIA CHIP-SCALE PACKAGING Public/Granted day:2021-03-18
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