An active matrix substrate (100) according to an embodiment of the present invention has a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix pattern, and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (1), a first TFT (10) supported on the substrate and including a crystalline silicon semiconductor layer (11), and a second TFT (20) supported on the substrate and including an oxide semiconductor layer (21). The first TFT and the second TFT each have a top gate structure. The oxide semiconductor layer is located below the crystalline silicon semiconductor layer.