Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16323373Application Date: 2016-08-10
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Publication No.: US10937874B2Publication Date: 2021-03-02
- Inventor: Ryota Tanaka , Tetsuya Hayashi , Wei Ni , Yasuaki Hayami
- Applicant: NISSAN MOTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: NISSAN MOTOR CO., LTD.
- Current Assignee: NISSAN MOTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Foley & Lardner LLP
- International Application: PCT/JP2016/073525 WO 20160810
- International Announcement: WO2018/029796 WO 20180215
- Main IPC: H01L29/41
- IPC: H01L29/41 ; H01L29/417 ; H01L29/78 ; H01L29/423 ; H01L21/8232 ; H01L27/088
Abstract:
A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.
Public/Granted literature
- US20200381522A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-12-03
Information query
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