Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16565687Application Date: 2019-09-10
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Publication No.: US10937875B2Publication Date: 2021-03-02
- Inventor: Yosuke Kajiwara , Aya Shindome , Masahiko Kuraguchi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-201521 20181026
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/417 ; H01L29/78 ; H01L29/778

Abstract:
According to one embodiment, a semiconductor device includes a semiconductor member, drain electrodes, a drain interconnect portion, and a drain conductive portion. The semiconductor member includes first and second semiconductor regions. The drain electrodes extend along a first direction, are arranged in a second direction crossing the first direction, and are provided at the first semiconductor region. A direction from the first semiconductor region toward the second semiconductor region is aligned with the first direction. The drain interconnect portion extends along the second direction and is electrically connected to the drain electrodes. The drain conductive portion is electrically connected to the drain interconnect portion. The drain conductive portion includes first and second conductive regions. A portion of the drain interconnect portion is between the first conductive region and the first semiconductor region in a third direction. The third direction crosses a plane including the first and second directions.
Information query
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