Invention Grant
- Patent Title: Forming thermally stable salicide for salicide first contacts
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Application No.: US16662782Application Date: 2019-10-24
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Publication No.: US10937889B2Publication Date: 2021-03-02
- Inventor: Praneet Adusumilli , Emre Alptekin , Christian Lavoie , Ahmet S. Ozcan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Douglas Pearson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/285 ; H01L21/8234 ; H01L29/04 ; H01L29/08 ; H01L29/417
Abstract:
A method for forming a salicide includes forming, on at least one semiconductor fin, at least one source/drain (S/D) region including a (111) facet and having a cross-sectional quadrilateral shape, forming a conductive material on the (111) facet, annealing the conductive material to form a silicide on the (111) facet, and forming at least one contact to the silicide.
Public/Granted literature
- US20200058758A1 FORMING THERMALLY STABLE SALICIDE FOR SALICIDE FIRST CONTACTS Public/Granted day:2020-02-20
Information query
IPC分类:
