- Patent Title: Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cells
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Application No.: US15890530Application Date: 2018-02-07
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Publication No.: US10937904B2Publication Date: 2021-03-02
- Inventor: Haitao Liu , Kamal M. Karda , Albert Fayrushin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/51 ; H01L27/11556 ; H01L27/11582 ; H01L21/28 ; H01L27/11597 ; H01L29/792 ; H01L27/1157 ; H01L27/1159 ; H01L29/66
Abstract:
A programmable charge-storage transistor comprises channel material, insulative charge-passage material, charge-storage material, a control gate, and charge-blocking material between the charge-storage material and the control gate. The charge-blocking material comprises a non-ferroelectric insulator material and a ferroelectric insulator material. Arrays of elevationally-extending strings of memory cells of memory cells are disclosed, including methods of forming such. Other embodiments, including method, are disclosed.
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