Invention Grant
- Patent Title: Semiconductor device and semiconductor device package including the same
-
Application No.: US16415245Application Date: 2019-05-17
-
Publication No.: US10937923B2Publication Date: 2021-03-02
- Inventor: Hyun Jee Oh , Rak Jun Choi , Byeoung Jo Kim
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: KED & Associates LLP
- Priority: KR10-2016-0112809 20160901,KR10-2016-0163830 20161202
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/00 ; H01L33/14 ; H01L33/22 ; H01L33/32 ; H01L33/38 ; H01L33/42 ; H01L23/62 ; H01L25/07 ; H01S5/04 ; H01S5/22 ; H01S5/34 ; H01L21/66 ; H01L25/075 ; H01S5/343 ; H01L33/04

Abstract:
A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
Public/Granted literature
- US20190280154A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE INCLUDING THE SAME Public/Granted day:2019-09-12
Information query
IPC分类: