Invention Grant
- Patent Title: Magnetoresistive random access memory structure and method of forming the same
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Application No.: US16235816Application Date: 2018-12-28
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Publication No.: US10937956B2Publication Date: 2021-03-02
- Inventor: Chern-Yow Hsu , Wei-Hang Huang , Shih-Chang Liu , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/08 ; H01L27/12 ; G11C11/16 ; H01L43/02 ; H01L27/22
Abstract:
A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.
Public/Granted literature
- US20190140169A1 Magnetoresistive Random Access Memory Structure and Method of Forming the Same Public/Granted day:2019-05-09
Information query
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