Invention Grant
- Patent Title: Random access memory
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Application No.: US16862384Application Date: 2020-04-29
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Publication No.: US10938607B2Publication Date: 2021-03-02
- Inventor: Jian Hung Shen
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Anhui
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN201711060125.3 20171101
- Main IPC: H03F3/193
- IPC: H03F3/193 ; H03F3/45 ; H03K17/16 ; H04L25/40 ; H04L7/00 ; H04L25/03 ; H04B10/50 ; G11C7/10 ; G11C7/22 ; H04B10/2507 ; H04L25/14

Abstract:
A random access memory (RAM) including a deserializer is disclosed. The RAM further comprises a continuous-time linear equalizer (CTLE) including a first input terminal that receives an input signal for the RAM and a first output terminal communicatively connected to the deserializer, the CTLE configured to perform a channel gain compensation on the input signal received by the first input terminal and to transmit the compensated input signal to the deserializer. The RAM may further comprise a decision feedback equalizer (DFE) including a second input terminal communicatively connected to the CTLE and a second output terminal communicatively connected to the deserializer, the DFE configured to reduce an inter-symbol interference (ISI) of the input signal.
Public/Granted literature
- US20200259686A1 RANDOM ACCESS MEMORY Public/Granted day:2020-08-13
Information query
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