Invention Grant
- Patent Title: Etching composition additive, method for preparing the same and etching composition comprising the same
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Application No.: US16594387Application Date: 2019-10-07
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Publication No.: US10941341B2Publication Date: 2021-03-09
- Inventor: Cheol Woo Kim , Yu Na Shim , Je Ho Lee , Jae Hoon Kwak , Young Bom Kim , Jin Kyung Jo
- Applicant: SK Innovation Co., Ltd. , SK-Materials Co., Ltd.
- Applicant Address: KR Seoul; KR Yeongju-si
- Assignee: SK Innovation Co., Ltd.,SK-Materials Co., Ltd.
- Current Assignee: SK Innovation Co., Ltd.,SK-Materials Co., Ltd.
- Current Assignee Address: KR Seoul; KR Yeongju-si
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: KR10-2018-0128248 20181025
- Main IPC: C09K13/04
- IPC: C09K13/04 ; C09K13/06 ; H01L21/321 ; C23F1/16 ; H01L21/311 ; C09K13/00
Abstract:
An etching composition providing a high selection ratio enabling selective removal of a nitride film and minimization of an etching rate, a preparation method thereof, an etching composition additive prepared through a reaction of phosphoric anhydride and a silane compound represented by Formula 1 below, a method for preparing the same and an etching composition including the same are provided:
Information query
