Invention Grant
- Patent Title: Method for manufacturing elementary metal including metal precursor pressurization dosing operation
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Application No.: US16172179Application Date: 2018-10-26
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Publication No.: US10941488B2Publication Date: 2021-03-09
- Inventor: Myung Mo Sung , Kyu-Seok Han , Hongbum Kim
- Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Applicant Address: KR Seoul
- Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2016-0052633 20160429
- Main IPC: C23C16/14
- IPC: C23C16/14 ; C23C16/455 ; C23C16/52 ; B01J3/00 ; B01J3/02 ; B01J3/03

Abstract:
A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.
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